LB123T discrete semiconductors r dc components co., ltd. technical specifications of npn epitaxial planar transistor pinning 1 = emitter 2 = collector 3 = base to-126 dimensions in inches and (millimeters) .055(1.39).045(1.14) .032(0.81).028(0.71) .052(1.32).048(1.22) .620(15.75).600(15.25) .279(7.09).275(6.99) .041(1.05).037(0.95) .022 (0.55) .154(3.91).150(3.81) typ 3o typ 3o typ .105(2.66).095(2.41) .189(4.80).171(4.34) .304(7.72).285(7.52) 3o typ 3o typ .152(3.86).138(3.50) 1 2 3 description designed for high voltage, high speed switching circuits, and amplifier applications . characteristic symbol rating unit collector-base voltage vcbo 600 v collector-emitter voltage vceo 400 v emitter-base voltage vebo 8 v collector current(dc) ic 1 a collector current(pluse) ic 2 a total power dissipation pd 3.5 w total power dissipation(t c=25oc) pd 30 w junction temperature tj +150 oc storage temperature tstg -55 to +150 oc absolute maximum ratings(ta=25oc) characteristic symbol min typ max unit test conditions collector-base breakdown volatge bvcbo 600 - - v ic=1ma, ie=0 collector-emitter breakdown voltage bvceo 400 - - v ic=10ma, ib=0 emitter-base breakdown volatge bvebo 8 - - v ie=1ma, ic=0 collector cutoff current icbo - - 10 ma vcb =600v, ie=0 emitter cutoff current iebo - - 10 ma vbe =9v, ic=0 collector-emitter saturation voltage (1) vce(sat)1 - - 0.8 v ic=0.1a, ib=10ma vce(sat)2 - - 0.9 v ic=0.3a, ib=30ma base-emitter saturation voltage (1) vbe(sat)1 - - 1.2 v ic=0.1a, ib=10ma vbe(sat)2 - - 1.8 v ic=0.3a, ib=30ma hfe1 10 - 50 - ic=0.3a, vce=5v dc current gain(1) hfe2 10 - - - ic=0.5a, vce=5v hfe3 6 - - - ic=1a, vce=5v electrical characteristics(ratings at 25 oc ambient temperature unless otherwise specified) (1)pulse test: pulse width 380ms, duty cycle 2% rank b1 b2 b3 b4 b5 b6 b7 b8 range 10~17 13~22 18~27 23~32 28~37 33~42 38~47 43~50 classification of hfe1
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